O8 K3 Ta1

semiconductor

· O8 K3 Ta1

O8 K3 Ta1 is a tantalum-containing semiconductor compound with an oxygen-rich composition, likely an oxide-based material combining tantalum with potassium and oxygen phases. This appears to be a research or specialized compound rather than a commodity material, potentially developed for applications requiring tantalum's high refractory properties and chemical inertness combined with semiconductor functionality. The material may be of interest in high-temperature electronics, catalysis, or energy storage applications where tantalum's corrosion resistance and the semiconductor properties of oxide phases provide unique advantages over conventional alternatives.

high-temperature electronicscatalytic coatingsenergy storage devicescorrosion-resistant semiconductorsresearch compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,993.2	ksi	—
Shear Modulus(G)	2,952	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.232	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.613	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 K3 Ta1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control