O8I2Tl2 is a mixed-halide thallium oxide compound belonging to the family of heavy-metal halide semiconductors, likely a research or specialty material rather than a commercial standard. This compound is investigated primarily in the context of wide-bandgap semiconductor research and optoelectronic applications, where thallium halides are explored for their unique electronic properties and potential in infrared detection, scintillation, or specialized photonic devices. The incorporation of both iodide and oxygen suggests potential interest in achieving tunable properties for niche applications where conventional semiconductors (Si, GaAs, III-V compounds) are unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3920 | eV/atom | — |