O8 Ga4 Ge1

semiconductor

· O8 Ga4 Ge1

O8Ga4Ge1 is a ternary oxide semiconductor compound combining gallium and germanium in an oxygen-rich matrix, likely a research-phase material within the wide-bandgap semiconductor family. This composition suggests potential applications in optoelectronics or high-temperature device research, though it remains primarily exploratory rather than a mature commercial material. Engineers would consider this compound for specialized photonic or thermal management applications where gallium–germanium oxide systems offer advantages in bandgap engineering or lattice matching that conventional binary oxides cannot provide.

Research optoelectronicsPhotonic integrated circuitsHigh-temperature semiconductorsWide-bandgap device engineeringExperimental thin-film applicationsThermal management substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.235	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.940	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 Ga4 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control