O8 Ga4 Cd2

semiconductor

· O8 Ga4 Cd2

O8Ga4Cd2 is an experimental ternary oxide semiconductor compound combining gallium and cadmium oxides, representing a research-phase material in the broader family of wide-bandgap and II-VI semiconductors. While not yet in established commercial production, materials in this compositional space are investigated for optoelectronic and photonic applications where tunable bandgap and stability advantages over binary cadmium oxide or gallium oxide alone may offer benefits. The compound's mechanical stiffness characteristics suggest potential for high-stress semiconductor device environments, though development remains largely in academic and laboratory settings.

experimental optoelectronicswide-bandgap semiconductor researchUV photodetectors (developmental)high-temperature electronics (potential)thin-film device substrates (research)compound semiconductor engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	164.5	GPa	—
Shear Modulus(G)	62.08	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.814	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.787	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 Ga4 Cd2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control