O8 Ga2 Nb2 is an experimental semiconductor compound combining gallium and niobium oxides, belonging to the family of mixed-metal oxide semiconductors under active materials research. This compound is investigated primarily in academic and advanced materials research contexts for potential applications in optoelectronic devices and functional ceramic systems, though it has not achieved widespread industrial deployment. Researchers are exploring its semiconductor properties as an alternative to conventional binary oxides, with potential advantages in tailored band gap engineering and thermal stability for specialized electronic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 173.1 | GPa | — | ||
Shear Modulus(G) | 62.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.406 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.413 | eV/atom | — |