O8 Ga2 In6 Pt1

semiconductor

· O8 Ga2 In6 Pt1

O8Ga2In6Pt1 is an experimental compound semiconductor combining gallium, indium, platinum, and oxygen—likely a mixed-metal oxide or ternary/quaternary semiconductor alloy. This composition falls within research into wide-bandgap semiconductors and advanced optoelectronic materials, where the combination of group III elements (Ga, In) with a precious metal (Pt) and oxygen suggests investigation into novel electronic or photonic properties not achievable in conventional binary semiconductors. While not a production material, compounds in this family are of interest for high-temperature electronics, UV/visible light emission or detection, and catalytic applications where the platinum component may enhance carrier transport or surface reactivity.

Research and development semiconductorsHigh-temperature electronicsOptoelectronic device prototypingWide-bandgap semiconductor explorationCatalytic material research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6339	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.564	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 Ga2 In6 Pt1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control