Na2Al2As2O8 is an inorganic compound belonging to the arsenic-bearing oxide semiconductor family, combining sodium, aluminum, and arsenic oxides. This material is primarily of research interest for solid-state electronics and optoelectronic applications, where arsenic-based compounds are explored for their potential bandgap properties and crystal structure stability. While not yet established in mainstream industrial production, materials in this compositional space are investigated for potential use in specialized semiconductor devices, photonic components, and high-temperature ceramic applications where arsenic-containing phases offer unique electronic or thermal characteristics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,827.6 | ksi | — | ||
Shear Modulus(G) | 9,114.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.792 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.377 | eV/atom | — |