O8 F2 Na2 Al2 As2

semiconductor

· O8 F2 Na2 Al2 As2

Na2Al2As2O8 is an inorganic compound belonging to the arsenic-bearing oxide semiconductor family, combining sodium, aluminum, and arsenic oxides. This material is primarily of research interest for solid-state electronics and optoelectronic applications, where arsenic-based compounds are explored for their potential bandgap properties and crystal structure stability. While not yet established in mainstream industrial production, materials in this compositional space are investigated for potential use in specialized semiconductor devices, photonic components, and high-temperature ceramic applications where arsenic-containing phases offer unique electronic or thermal characteristics.

experimental semiconductorsoptoelectronic researchsolid-state device developmentrefractory oxide ceramicscrystal structure studiesmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	102.2	GPa	—
Shear Modulus(G)	62.84	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.792	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.377	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 F2 Na2 Al2 As2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control