O8Bi2V2 is an experimental bismuth-vanadium oxide compound belonging to the semiconductor materials family, likely investigated for its mixed-valence metal oxide properties and potential photochemical or electrochemical behavior. This research-phase material represents exploration within complex oxide systems where bismuth and vanadium combinations are studied for catalytic, photocatalytic, or electronic applications. Interest in this compound class stems from the synergistic properties of bismuth oxides (known for visible-light activity and layered structures) and vanadium oxides (redox-active, variable oxidation states), making such composites candidates for next-generation functional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,052.4 | ksi | — | ||
Shear Modulus(G) | 6,825.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.727 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.119 | eV/atom | — |