O8As2Y2 is an experimental ternary compound combining arsenic and yttrium oxides, belonging to the semiconductor family of mixed-metal oxide systems. Research compounds of this type are typically investigated for potential optoelectronic or photonic applications where bandgap engineering and crystal structure control are critical, though this specific composition remains in early-stage development with limited industrial deployment. The material's semiconducting properties and yttrium content suggest potential relevance to specialized electronics or photonic devices, but would require characterization and scalability work before practical engineering adoption.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,997.5 | ksi | — | ||
Shear Modulus(G) | 9,654.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.908 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.533 | eV/atom | — |