O8 As2 Lu2
semiconductorO8As2Lu2 is a rare-earth arsenic oxide compound combining lutetium (a heavy lanthanide) with arsenic and oxygen; it represents an exploratory semiconductor material from the rare-earth oxychalcogenide family rather than a commercially established alloy or ceramic. This compound exists primarily in academic research contexts, where rare-earth arsenic oxides are investigated for potential optoelectronic and photonic device applications, particularly where the unique electronic structure of heavy lanthanides might enable narrow bandgap behavior or luminescence properties unavailable in conventional semiconductors. Engineers considering this material should recognize it as a research-phase compound; its relevance is strongest in advanced photonics, infrared sensors, or specialized electronic devices where lutetium's high atomic number and arsenic's semiconducting properties might be leveraged, though material maturity and reproducibility are still under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |