O8As2Ho2 is a rare-earth arsenic oxide compound containing holmium, belonging to the family of lanthanide-based semiconducting materials. This is a research-phase compound rather than a widely commercialized material; it represents exploration into rare-earth semiconductor systems for potential optoelectronic and magnetic applications. Materials in this chemical family are investigated for specialty semiconductor devices, magnetic ordering phenomena, and emerging quantum materials where the unique electronic and magnetic properties of holmium can be exploited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.822 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.534 | eV/atom | — |