O7 V2 Mn2 is a ternary oxide semiconductor compound containing oxygen, vanadium, and manganese elements, likely explored in materials research for functional electronic applications. This material family is investigated for potential use in catalysis, energy storage, and electronic device applications where mixed-valence transition metal oxides offer tunable electrical and electrochemical properties. The combination of vanadium and manganese oxides is notable for research into cost-effective alternatives to rare-earth materials, though this specific composition remains primarily in the experimental/development phase rather than established high-volume industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 91.47 | GPa | — | ||
Shear Modulus(G) | 23.38 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.202 | eV/atom | — |