O7 Si2 In2

semiconductor

· O7 Si2 In2

O7Si2In2 is an experimental oxide semiconductor compound combining silicon, indium, and oxygen in a ternary system. This material belongs to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, which are primarily investigated for optoelectronic and photovoltaic applications where conventional materials like ITO or ZnO may have limitations. Research interest in this composition focuses on potential use in thin-film transistors, optical coatings, and next-generation solar cells, though it remains largely confined to academic and developmental stages rather than mature industrial production.

transparent conducting coatingsthin-film transistorsphotovoltaic researchoptoelectronic deviceswide-bandgap semiconductorsdisplay technology development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	23,035.2	ksi	—
Shear Modulus(G)	9,493.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.959	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.383	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O7 Si2 In2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control