Mg₂As₂ is a III-V semiconductor compound combining magnesium and arsenic, belonging to the family of wide-bandgap semiconductors. This material is primarily of research interest rather than established in high-volume production, with potential applications in optoelectronics and high-temperature device research where its semiconductor properties and mechanical characteristics could enable novel device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,378 | ksi | — | ||
Shear Modulus(G) | 7,761.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.338 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.978 | eV/atom | — |