O6Zn2Sn2 is a ternary oxide semiconductor compound containing zinc and tin in a structured oxide lattice. This material belongs to the family of mixed-metal oxides and is primarily of research interest for optoelectronic and photocatalytic applications. It represents an emerging material composition where the combination of zinc and tin oxides offers potential advantages in band-gap engineering and charge carrier dynamics compared to single-metal oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.329 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.677 | eV/atom | — |