This is an experimental rare-earth oxide semiconductor compound containing barium, holmium, and antimony (Ba₂HoSbO₆ stoichiometry). While not a commercially established material, it belongs to the family of complex oxide semiconductors being investigated for advanced electronic and photonic applications. The incorporation of rare-earth elements like holmium suggests potential for luminescent, magnetic, or optoelectronic functionality in research-phase development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 142.3 | GPa | — | ||
Shear Modulus(G) | 87.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.671 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.919 | eV/atom | — |