O6Sb1Ba2Dy1 is an experimental mixed-metal oxide semiconductor containing barium, dysprosium, and antimony—a rare-earth compound unlikely to have established commercial production or widespread industrial adoption. This material belongs to the family of complex oxide semiconductors, which are primarily investigated in research settings for potential applications in optoelectronics, magnetism, and next-generation electronic devices. Engineers would consider this compound only in specialized R&D contexts where its unique electronic or magnetic properties derived from dysprosium doping offer advantages over conventional semiconductors, though its practical utility and processing methods remain under investigation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,145.7 | ksi | — | ||
Shear Modulus(G) | 12,566.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.722 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.909 | eV/atom | — |