O6Sb1Ba2Bi1 is an experimental mixed-metal oxide semiconductor compound combining barium, bismuth, and antimony in an oxygen-rich matrix. This material belongs to the family of complex ternary/quaternary oxides being explored for next-generation electronic and optoelectronic applications. While not yet commercialized, compounds in this compositional space are of research interest for photocatalysis, photovoltaics, and solid-state electronics due to the tunable bandgaps and electronic properties achievable through metal oxide mixing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,282.9 | ksi | — | ||
Shear Modulus(G) | 1,243.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.078 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.234 | eV/atom | — |