O6 Rb4 Te2 is an experimental ternary oxide semiconductor compound containing rubidium and tellurium. This material belongs to the class of metal telluride oxides, which are primarily investigated in research settings for solid-state electronics and photonic applications due to their tunable band gaps and potential for novel device architectures. The rubidium-tellurium-oxide system is of particular interest to materials scientists exploring next-generation semiconductors where conventional silicon or III-V compounds may be limited, though practical industrial applications remain limited pending further development of synthesis methods and device integration strategies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.43 | GPa | — | ||
Shear Modulus(G) | 10.90 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.662 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.619 | eV/atom | — |