O6 K6 Ga2

semiconductor

· O6 K6 Ga2

O6 K6 Ga2 is an experimental compound in the gallium oxide (Ga2O3) material family, likely doped or modified with potassium (K) and oxygen in specific stoichiometric ratios for research purposes. This composition falls within wide-bandgap semiconductor materials, which are of growing interest for high-temperature, high-power, and UV-detection applications where traditional silicon reaches its limits. The exact phase and crystal structure of this particular formulation appear to be in development stages, positioning it as a candidate for next-generation power electronics and optoelectronic devices rather than a mature commercial material.

Wide-bandgap power semiconductorsHigh-temperature electronicsUV photodetectorsResearch and developmentNext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.898	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.798	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O6 K6 Ga2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control