O6 In2 Ba3

semiconductor

· O6 In2 Ba3

O₆In₂Ba₃ is an inorganic oxide semiconductor compound containing barium, indium, and oxygen elements. This material is primarily of research and experimental interest rather than established in high-volume production, investigated for potential applications in optoelectronics and solid-state device development where the specific electronic band structure and oxide chemistry may offer advantages in niche performance windows.

experimental semiconductor devicesoptoelectronic researchoxide-based electronicsmaterials researchthin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	13,860.8	ksi	—
Shear Modulus(G)	6,230.8	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9721	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.343	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O6 In2 Ba3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control