O6 Ga4 is a gallium oxide-based semiconductor compound, likely representing a specific stoichiometry or crystalline phase within the gallium oxide (Ga2O3) material family. Gallium oxide semiconductors are emerging wide-bandgap materials gaining attention for high-power and high-temperature electronic applications where silicon and traditional semiconductors reach performance limits. This material would be of interest to engineers developing next-generation power electronics, RF devices, and sensors requiring superior thermal stability and breakdown voltage compared to conventional semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,778.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 13,901.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.694 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.738 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data