Sr₂GaSbO₆ is an oxide-based semiconductor compound belonging to the family of complex metal oxides and perovskite-related structures. This is a research-phase material under investigation for next-generation optoelectronic and photovoltaic applications, where its layered structure and tunable bandgap make it a candidate for solar energy conversion and visible-light photocatalysis. The material combines strontium, gallium, and antimony oxide chemistry to achieve semiconducting behavior that differs from simpler binary oxides, offering potential advantages in efficiency or cost compared to conventional III-V semiconductors or lead halide perovskites.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 157.9 | GPa | — | ||
Shear Modulus(G) | 97.00 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9462 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.414 | eV/atom | — |