This is a mixed-metal oxide semiconductor containing calcium, barium, and osmium in a 1:2:1 ratio—a complex ternary compound that belongs to the family of perovskite-related or pyrochlore-structured oxides. This material is primarily of research and development interest rather than established industrial use; such osmium-containing oxides are investigated for their electronic properties, potential catalytic activity, and behavior in high-temperature or corrosive environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.522 | eV/atom | — |