O6 Bi1 Tb1 Mn2

semiconductor

· O6 Bi1 Tb1 Mn2

O6Bi1Tb1Mn2 is a complex oxide semiconductor compound containing bismuth, terbium, and manganese in a mixed-valence structure. This is primarily a research material rather than an established industrial compound, developed to explore multiferroic or magnetoelectric properties that arise from the combination of rare-earth (Tb) and transition-metal (Mn) elements with bismuth oxide. Materials in this family are of interest for next-generation applications requiring coupled magnetic and ferroelectric behavior, though they remain largely in the experimental phase with limited commercial deployment.

multiferroic device researchmagnetoelectric sensorsspintronics prototypingthin-film heterostructuresfundamental materials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3252	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.175	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O6 Bi1 Tb1 Mn2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control