O6 Ba2 Ho1 Ta1
semiconductorO₆Ba₂Ho₁Ta₁ is an experimental oxide compound combining barium, holmium, and tantalum in a perovskite-related crystal structure, classified as a semiconductor material. This is a research-phase compound rather than a commercially established material; such complex oxide semiconductors are being investigated for potential applications in optoelectronics and solid-state devices where the rare-earth (holmium) and high-Z metal (tantalum) constituents may enable tunable electronic or photonic properties. The material family offers potential advantages in radiation hardness and high-temperature stability compared to conventional semiconductors, though further development and characterization would be required for engineering deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — median of 2 measurements | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |