O4 K3 V1 is a semiconductor compound containing oxygen, potassium, and vanadium in a 4:3:1 stoichiometric ratio. This material belongs to the family of mixed-metal oxides and represents a research-phase composition with potential applications in electrochemical energy storage and catalysis. The inclusion of vanadium—known for its variable oxidation states—suggests this compound may exhibit interesting redox properties and ionic conductivity relevant to battery technologies or catalytic processes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,537.3 | ksi | — | ||
Shear Modulus(G) | 134.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.617 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.314 | eV/atom | — |