O4 K3 Mn1

semiconductor

· O4 K3 Mn1

O4K3Mn1 is an experimental oxide-based semiconductor compound containing oxygen, potassium, and manganese, likely investigated for its electronic and structural properties in research settings. This material belongs to the family of mixed-metal oxides, where manganese valence states and potassium's ionic contribution modulate electronic behavior and crystal structure. While not yet established in high-volume industrial production, such ternary oxide systems are of interest in solid-state electronics, catalysis research, and energy storage device development due to manganese's variable oxidation states and the structural role of alkali metals in oxide frameworks.

experimental semiconductorscatalyst support materialssolid-state energy storage researchthin-film electronicsmixed-valence oxide systemslaboratory-scale synthesis

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	36.89	GPa	—
Shear Modulus(G)	7.733	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.851	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O4 K3 Mn1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control