O₄In₂Cu₂ is an experimental ternary oxide semiconductor compound containing indium and copper with potential applications in advanced electronic and photonic devices. This material belongs to the family of mixed-metal oxides and is primarily of research interest for investigating novel electronic properties that may arise from the combination of indium and copper oxidation states. The compound's semiconductor character and multi-element composition make it potentially relevant to emerging areas such as transparent conductors, photocatalysts, or alternative absorber layers in solar cells, though it remains largely in the development phase rather than mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 132.4 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 43.59 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4369 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.270 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data