O4Ga2Tl2 is an experimental mixed-metal oxide semiconductor compound combining gallium and thallium oxides. This material belongs to the broader family of metal oxides and mixed-valent semiconductors being researched for optoelectronic and sensing applications where the combination of gallium and thallium can enable tunable band gaps and enhanced light-matter interactions compared to single-element oxide semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,861.7 | ksi | — | ||
Shear Modulus(G) | 3,946 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.217 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.351 | eV/atom | — |