O₄Fe₂Tl₂ is an experimental mixed-metal oxide semiconductor combining iron and thallium oxides, representing a research-phase compound in the broader family of multivalent transition metal oxides. This material belongs to complex oxide systems that have been investigated for potential optoelectronic and photovoltaic applications, though it remains largely confined to laboratory research rather than established industrial production. The unusual combination of iron's magnetic and catalytic properties with thallium's high polarizability creates a material of theoretical interest for semiconductor physics, though toxicity concerns associated with thallium and limited stability data restrict practical deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,249.3 | ksi | — | ||
Shear Modulus(G) | 698.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9590 | eV/atom | — |