O3 U1 is a semiconductor compound with an unspecified composition, likely representing a research or specialized material within the uranium oxide or similar rare-earth/actinide oxide family. Limited public documentation suggests this may be an experimental or proprietary semiconductor phase used in nuclear materials science, radiation detection, or high-temperature electronic applications. Engineers should consult material specification sheets and supplier data, as the designation and properties may be restricted or applicable only to specialized research and defense-related programs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 209.1 | GPa | — | ||
Shear Modulus(G) | 69.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5401 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.108 | eV/atom | — |