O2 Zr6 is a zirconium-based oxide compound belonging to the semiconductor material class, likely a mixed-valence or defect zirconium oxide phase relevant to advanced materials research. This material is primarily of research interest for applications requiring high-temperature stability, chemical inertness, and controlled electronic properties that zirconium oxides provide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.505 | eV/atom | — |