O2 Zr1

semiconductor

· O2 Zr1

O2 Zr1 is a zirconium oxide-based semiconductor material, likely a zirconia compound or zirconia-doped semiconductor system designed for electronic or optoelectronic applications. This material represents research or specialized engineering interest in the zirconia material family, which is valued for high thermal stability, chemical inertness, and electrical properties that can be engineered through doping and processing. Zirconia semiconductors are explored for high-temperature electronics, ionic conductors, and advanced sensor applications where conventional silicon-based devices fail, making them relevant for extreme environment or solid-state energy conversion systems.

high-temperature electronicssolid-state sensorsoxygen ion conductorsadvanced ceramics researchextreme environment applicationselectrochemical devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	35,674.5	ksi	—
Shear Modulus(G)	18,228.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.452	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.647	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Zr1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control