O2 Zr1 is a zirconium oxide-based semiconductor material, likely a zirconia compound or zirconia-doped semiconductor system designed for electronic or optoelectronic applications. This material represents research or specialized engineering interest in the zirconia material family, which is valued for high thermal stability, chemical inertness, and electrical properties that can be engineered through doping and processing. Zirconia semiconductors are explored for high-temperature electronics, ionic conductors, and advanced sensor applications where conventional silicon-based devices fail, making them relevant for extreme environment or solid-state energy conversion systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 246.0 | GPa | — | ||
Shear Modulus(G) | 125.7 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.452 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.647 | eV/atom | — |