O2 Ti1 is a titanium-based semiconductor material, likely a titanium oxide compound or doped titanium system designed for electronic or optoelectronic applications. This material bridges traditional titanium metallurgy with semiconductor functionality, making it relevant for researchers developing next-generation devices that require both the structural properties of titanium and controlled electronic behavior. Its specific composition and performance characteristics position it for emerging applications in photocatalysis, sensors, or thin-film electronics where titanium's biocompatibility and corrosion resistance can be combined with semiconducting properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,771.1 | ksi | — | ||
Shear Modulus(G) | 10,901 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.354 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.080 | eV/atom | — |