O2 Ti12 is a titanium-based semiconductor compound, likely representing a titanium oxide or titanium-doped oxide phase with potential applications in advanced electronic and photonic devices. This material bridges traditional titanium metallurgy with semiconductor functionality, making it relevant for researchers and engineers developing next-generation materials with combined mechanical robustness and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,644.5 | ksi | — | ||
Shear Modulus(G) | 8,598.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8580 | eV/atom | — |