O2Si1 (silicon monoxide, SiO) is a ceramic semiconductor compound occupying a unique position between amorphous silica and crystalline silicon in terms of structure and electronic properties. It is primarily used in thin-film applications including optical coatings, protective layers, and integrated circuit passivation, where its partial crystallinity and tunable refractive index provide advantages over pure SiO2. The material is notable for offering a bridge between the insulating properties of silicon dioxide and the semiconducting behavior of silicon, making it valuable in optoelectronic devices and as an interface layer in advanced semiconductor processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40,107.7 | ksi | — | ||
Shear Modulus(G) | 20,244.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.211 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.695 | eV/atom | — |