O₂Pa1 is a semiconductor material based on oxygen and palladium compounds, representing an emerging class of oxide semiconductors with potential for advanced electronic and optoelectronic applications. This material family is primarily of research interest, being explored for applications requiring specific electronic properties at the intersection of oxide ceramics and metal-based semiconductors. Engineers evaluating O₂Pa1 should recognize it as a specialized compound under development rather than an established commercial material, with potential advantages in applications requiring high-stiffness semiconducting behavior and chemical stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 214.4 | GPa | — | ||
Shear Modulus(G) | 108.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.851 | eV/atom | — |