O2 Ni1 is a nickel-based semiconductor compound with oxygen incorporation, likely part of the nickel oxide (NiO) family or a nickel oxide derivative system. This material sits at the intersection of traditional nickel metallurgy and oxide semiconductor research, making it relevant for applications requiring both electronic functionality and corrosion resistance. The material is primarily of research and emerging industrial interest rather than a fully commoditized product, with potential applications in catalysis, thin-film electronics, and gas sensing where nickel's catalytic properties combine with semiconductor behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,701.2 | ksi | — | ||
Shear Modulus(G) | 9,739.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7778 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8170 | eV/atom | — |