O2 Mn3 As2 Ba2

semiconductor

· O2 Mn3 As2 Ba2

Ba₂Mn₃O₂As₂ is an experimental ternary oxide-arsenide semiconductor combining barium, manganese, and arsenic in a layered structure. This research-phase compound belongs to the family of mixed-valent transition metal pnictide oxides, which are of interest for investigating novel electronic and magnetic properties at the intersection of oxide and pnictide materials science. While not yet commercialized, such compounds are explored for potential applications in magnetoresistive devices and solid-state electronics where the interplay between magnetic manganese and conductive pathways could be engineered for specific functional behavior.

Experimental semiconductor researchMagnetoresistive device developmentCondensed matter physics studiesPnictide-oxide heterostructuresFunctional materials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	88.62	GPa	—
Shear Modulus(G)	41.87	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00840	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.208	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Mn3 As2 Ba2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control