O2Mn1 is a manganese oxide semiconductor compound with a stoichiometric ratio of one manganese atom to two oxygen atoms. This material belongs to the transition metal oxide family and is primarily investigated for applications requiring semiconducting or electrochemical properties in research and emerging device contexts. Its mechanical rigidity and electronic characteristics make it a candidate material for next-generation energy storage, catalysis, and thin-film device applications where manganese oxides offer advantages in cost, abundance, and electrochemical stability compared to rare-earth alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,116.5 | ksi | — | ||
Shear Modulus(G) | 4,501 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.740 | eV/atom | — |