O2 Mn1

semiconductor

· O2 Mn1

O2Mn1 is a manganese oxide semiconductor compound with a stoichiometric ratio of one manganese atom to two oxygen atoms. This material belongs to the transition metal oxide family and is primarily investigated for applications requiring semiconducting or electrochemical properties in research and emerging device contexts. Its mechanical rigidity and electronic characteristics make it a candidate material for next-generation energy storage, catalysis, and thin-film device applications where manganese oxides offer advantages in cost, abundance, and electrochemical stability compared to rare-earth alternatives.

battery and energy storage materialselectrochemical catalysisthin-film semiconductorsresearch and developmenttransition metal oxide devicesemerging electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	62.86	GPa	—
Shear Modulus(G)	31.03	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Mn1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control