O2 K2 Ba8 Bi6

semiconductor

· O2 K2 Ba8 Bi6

O2 K2 Ba8 Bi6 is an experimental mixed-metal oxide semiconductor compound containing potassium, barium, bismuth, and oxygen. This material belongs to the family of complex perovskite-related oxides and is primarily of research interest for exploring novel electronic and ionic transport properties in solid-state systems. The compound's potential applications lie in emerging technologies such as oxide-based electronics, solid-state energy storage, and thermoelectric devices, though it remains largely in the developmental stage without widespread commercial deployment.

experimental semiconductor researchsolid-state electronics developmentoxide-based devicesthermoelectric materials researchenergy storage systemsionic conductor studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8357	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.351	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 K2 Ba8 Bi6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control