O2 K1 Pr1 is a praseodymium-based oxide semiconductor, likely a rare-earth compound developed for specialized electronic or photonic applications. This material represents research-stage development in the rare-earth oxide family, which offers unique electronic and optical properties distinct from conventional semiconductors. The material would be of interest to engineers working on high-temperature electronics, optoelectronic devices, or advanced ceramics where rare-earth doping provides performance advantages over standard semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 77.30 | GPa | — | ||
Shear Modulus(G) | 46.44 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.654 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.817 | eV/atom | — |