O2Hg1 is an experimental mercury oxide semiconductor compound investigated for optoelectronic and photonic device applications. Limited commercial deployment exists; this material belongs to the broader family of metal oxide semiconductors being researched for UV/visible light detection, photodiodes, and potentially photocatalytic devices. Engineers consider such compounds when seeking alternatives to conventional wide-bandgap semiconductors, though synthesis, stability, and environmental/toxicity concerns typically constrain practical adoption compared to gallium nitride or silicon carbide platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.34 | GPa | — | ||
Shear Modulus(G) | 14.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4222 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.00900 | eV/atom | — |