O₂F₄Sn₄ is an experimental fluorine-tin oxide compound belonging to the mixed-valence tin oxide semiconductor family. This material is primarily of research interest for its potential in semiconductor and optoelectronic applications, where tin oxides are explored as alternatives to conventional materials for thin-film devices, photocatalysis, and transparent conductive coatings. Engineers would consider this compound when investigating novel tin-based ceramics with tailored electronic properties, though it remains largely in the development phase and is not yet widely deployed in mainstream industrial applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.26 | GPa | — | ||
Shear Modulus(G) | 15.69 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.642 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.024 | eV/atom | — |