O2 Cu1 Ga1

semiconductor
· O2 Cu1 Ga1

Cu₂O₁Ga₁ (or similar copper-gallium oxide formulation) is an emerging semiconducting compound combining copper and gallium oxides, representing experimental research into mixed-metal oxide systems for next-generation electronic applications. This material family is investigated primarily for photovoltaic and optoelectronic devices where the band gap engineering from gallium incorporation offers potential advantages over single-metal oxide alternatives; it remains largely in development stages rather than established industrial production. Engineers would consider this material when exploring novel absorber layers, transparent conductors, or wide-bandgap semiconductor platforms where conventional oxide semiconductors (like ZnO or SnO₂) require supplementary doping or lack sufficient tunability.

experimental photovoltaicsoptoelectronic semiconductorsthin-film transistorstransparent conducting oxides (TCO)band gap engineering researchnext-generation solar cells

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
24,018.3
ksi—
Shear Modulus(G)
10,396.3
ksi—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
1.010
eV—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
-1.477
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.