O2Ba1 is an experimental barium oxide-based semiconductor compound under investigation for advanced electronic and optoelectronic applications. This material belongs to the wider family of barium-containing oxide semiconductors, which are studied for potential use in photodetectors, scintillators, and other radiation-sensitive devices where barium's high atomic number provides advantages for photon and particle detection. While not yet a mainstream commercial material, compounds in this family show promise as alternatives to traditional semiconductors in specialized sensing and imaging applications where enhanced interaction with high-energy radiation is beneficial.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,066.4 | ksi | — | ||
Shear Modulus(G) | 6,059.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.327 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.086 | eV/atom | — |